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Pulsed Power Amplifiers


GaN-Based Power Amplifiers for TWT Amplifier Replacement

API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz.

These power amplifiers serve as cost-effective replacements for traveling wave tube (TWT) amplifiers and offer longer life, better efficiencies and reduced size and weight than their TWT counterparts.

Explore Pulsed Power Amplifiers:

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Call us at: +1 (888) 553-7531 for US Sales or contact an engineer to discuss your high power amplifier project today!

featured product


1,000 Watt GaN Solid State Pulsed Power Amplifier

Part
Number

Freq.
(GHz)

Gain
(dB min)

Output Power
(dBm)

Input Power
(dBm)

RF Pulse Width
(µsec)

Input/Output
VSWR

GaN SSPA Technology QBS-609 9.2 - 9.8 60 +60 +2 to +4 0.05 to 100 1.5:1

Pulsed Power Amplifier Overview & Applications


GaN Solid State Pulsed Power Amplifiers

API Technologies’ Solid State Pulsed Power Amplifier products provide output power up to 1 kW and suited for wide band operation. These amplifiers utilize state of the art thermal simulation and scanning tools as well as multiple design technologies resulting in reduced size, excellent thermal performance, and improved reliability.

Utilizing state of the art GaN transistor technology, API Technologies is able to overcome limitations in TWT (traveling wave tube) with solid state pulsed power amplifiers. These solid state designs overcome the inherent problems with electron tube TWTs of limited life and single point failure susceptibility while addressing the competing high performance airborne system requirements of kilowatt power levels and compact size.

Learn More:

› Enquire about Pulsed Power Amplifiers

› View our full line of Power Amplifier Products

Features & Specifications

View Product Datasheet:
Features:
  • 1kw Peak Output Power
  • Typical frequency range of 9 - 9.8 GHz
  • Efficiencies as high as 20%
  • Up to 100 µsec pulse width, 10% duty cycle
  • Targeted for TWT Amplifier Replacement
White Paper:
Applications Include:
  • Military and Commercial Radar
  • Communication Transmitters
  • Jamming Systems

Technology Comparison


GaN Solid State Pulsed Power Amplifiers overcome the limitations of TWT (Traveling Wave Tube) Amplifiers.

The advantages for using a GaN SSPA to replace a TWT include:
1. Eliminating a system’s finite life due to cathode exhaustion in the TWT.
2. Removing concern about TWT damage at turn-on after extended storage periods.
3. Eliminating multiple single point failure sources in the TWT.
4. Providing distributed final stage health monitoring and early failure warning while maintaining system operational integrity.
5. Offering improved reliability to meet modern EW system requirements.

Performance Category Solid State Pulsed Power Amplifier Traveling Wave Tube (TWT) Amplifier
Infant Mortality Eliminates the TWT turn-on risk associated with immediate turn-on after extended storage periods. To minimize risk of damage after prolonged storage, an 8-24 hour heater burn-in is recommended before cathode voltage is applied.
Cathode Exhaustion Eliminates the cathode exhaustion issue altogether, significantly extending the system’s operating life. Although there are steps that can be taken to extend cathode life in a TWT, it cannot be eliminated, resulting in the system having a finite operating lifetime.
MTBF SSPA uses parallel combined transistors that provide a soft fail configuration. Parallel power sources in the SSPA provide the opportunity to monitor amplifier health at multiple power stages. TWT relies on energy transfer from the electron beam into the RF signal traveling along a helix wire. All components in the tube are potential single point hard failure sources.

RF/Microwave Power Amplifier Capabilities


Silicon MOSFET, LDMOS, GaAs, GaN, and SiC Technologies

At API Technologies, our high performance power amplifier solutions are designed with strict attention to efficiency and reliability. Products include broadband, high linearity designs, as well as high frequency, narrowband, higher power amplifiers to 1,000 watts with emphasis on size and packaging. Our engineers are experts in multiple discipline integration, including power amplifier designs with integrated switches, filters and splitters.

Utilizing state of the art GaN transistor technology, API Technologies is able to overcome limitations in TWT (traveling wave tube) with solid state pulsed power amplifiers. These solid state designs overcome the inherent problems with electron tube TWTs of limited life and single point failure susceptibility while addressing the competing high performance airborne system requirements of kilowatt power levels and compact size.

Learn More:

› Enquire about Pulsed Power Amplifiers

› View our full line of Power Amplifier Products

Benefits & Features of Pulsed Power Amplifiers


Hermetically Sealed

Power Amplifiers are offered in hermetically sealed packages using mixed SMT and chip-and-wire manufacturing processes.

In-House Technology

Pulsed Power Amplifiers are designed and manufactured in the United States and utilize our in-house thin and thick film technologies and surface mount technologies (SMT).

Cost-Effective, TWTA Replacement

API Technologies' GaN solid state pulsed power amplifiers serve as cost-effective replacement solutions for travelling wave tube (TWT) amplifiers, offering reduced size and weight, better efficiencies and longer life and than their TWT counterparts.

PULSED POWER AMPLIFIERS

   

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